Published 1980
| Version v1
Journal article
Interface band structure and energy-level density of surface layers of (110) Ge-GaAs hetero structures
Creators
- 1. Dortmund Univ. (Germany, F.R.)
- 2. Liege Univ. (Belgium)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Grenzflaechenbandstruktur und Layer-Zustandsdichten von (110) Ge-GaAs Heterostrukturen
Publishing Information
- Journal Title
- Verh. Dtsch. Phys. Ges.
- Journal Issue
- no.5
- Series
- Verh. Dtsch. Phys. Ges.
Conference
- Title
- Spring meeting Freudenstadt '80 of the Arbeitskreis Festkoerperphysik of the DPG.
- Dates
- 24 - 28 Mar 1980.
- Place
- Freudenstadt, Germany, F.R.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 11542398
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- BAND THEORY; ENERGY-LEVEL DENSITY; GALLIUM ARSENIDES; GERMANIUM; INTERFACES; LAYERS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRON SPECTROSCOPY; ELEMENTS; GALLIUM COMPOUNDS; METALS; SPECTROSCOPY
Optional Information
- Notes
- Short communication only.