Heteroepitaxial growth of In_0.30Ga_0.70As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

We report on the growth of an In_0.30Ga_0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10⁷ cm⁻² with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I_DS of 70 μA/μm and g_m of above 60 μS/μm, demonstrating the high quality of the grown materials.