Published September 2014 | Version v1
Journal article Metadata-only

Photoelectric properties of defects in La-doped TlInS2 layered crystal

Creators

  • 1. Institute of Physics of Academy of Sciences of Azerbajdzhan, G. Dzhavida ave. 33, Az-1143, Baku (Azerbaijan)
  • 2. Department of Physics, Gebze Institute of Technology, Gebze 41400, Kocaeli (Turkey)
  • 3. Institute of Technical Acoustics, National Academy of Sciences, pr. Lyudnikov, 13, Vitebsk (Belarus)

Description

Undoped and La-doped TlInS2 single crystals have been investigated by the photo-induced current transient spectroscopy (PICTS) method. The characteristics of electrically active defects such as capture cross-section, thermal activation energy and temperature interval of defect recharging have been determined. The pyro electrical properties of TlInS2:La have been investigated as well. The defect responsible for pyro current anomalies has been established

Additional details

Additional titles

Original title (Russian)
Фотоэлектрическая активность дефектов слоистого кристалла TlInS₂ в присутствии примесей лантана

Publishing Information

Journal Title
Fizika Nizkikh Temperatur
Journal Volume
40
Journal Issue
9
Journal Page Range
p. 1062-1070
ISSN
0132-6414

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
46094667
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL DEFECTS; DOPED MATERIALS; INDIUM SULFIDES; LANTHANUM; LAYERS; PHASE TRANSFORMATIONS; SAMPLE PREPARATION; SPECTROSCOPY; TEMPERATURE DEPENDENCE; THALLIUM SULFIDES
Descriptors DEC
CHALCOGENIDES; CRYSTAL STRUCTURE; ELEMENTS; INDIUM COMPOUNDS; MATERIALS; METALS; RARE EARTHS; SULFIDES; SULFUR COMPOUNDS; THALLIUM COMPOUNDS