Resolving the EH6/7 level in 4H-SiC by Laplace-transform deep level transient spectroscopy

We show that Laplace transform deep level transient spectroscopy (LDLTS) is an effective technique for the separation of the overlapping emission rates of the EH6 and EH7 levels, which are known to constitute EH6/7, a mid-gap level in n-type 4H-SiC. The analysis of the electron irradiation dose, electric field dependence, and the effects of carbon interstitials injection on the emission rates of EH6 and EH7 shows that EH7 is dominant over EH6 and confirms that their nature is related to a carbon vacancy.