Published October 1, 2015 | Version v1
Journal article Metadata-only

Design and TCAD simulation of double-sided pixelated low gain avalanche detectors

Creators

  • 1. TIFPA INFN, Via Sommarive 14, 38123 Trento (Italy)
  • 2. Dipartimento di Ingegneria Industriale, Università di Trento, Via Sommarive 9, 38123 Trento (Italy)
  • 3. Fondazione Bruno Kessler, Via Sommarive 18, 38123 Trento (Italy)
  • 4. INFN Sezione di Torino, Via P. Giuria 2, 10125 Torino (Italy)
  • 5. Dipartimento di FIsica e Astronomia, Università di Firenze, and INFN Sezione di Firenze, Via Giovanni Sansone 1, 50019 Sesto Fiorentino (Italy)

Description

We introduce a double-sided variant of low gain avalanche detector, suitable for pixel arrays without dead-area in between the different read-out elements. TCAD simulations were used to validate the device concept and predict its performance. Different design options and selected simulation results are presented, along with the proposed fabrication process

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2015.03.039

Additional details

Identifiers

DOI
10.1016/j.nima.2015.03.039;
PII
S0168-9002(15)00355-1;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
796
Journal Page Range
p. 154-157
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
10. international conference on radiation effects on semiconductor materials detectors and devices (RESMDD)
Dates
8-10 Oct 2014
Place
Florence (Italy)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47030707
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DESIGN; EQUIPMENT; FABRICATION; GAIN; PERFORMANCE; PHOTODIODES; READOUT SYSTEMS; SI SEMICONDUCTOR DETECTORS; SIMULATION
Descriptors DEC
AMPLIFICATION; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Copyright
Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.