Published January 2000
| Version v1
Journal article
The recombination center in InP doped with sulphur
- 1. Tbilisi State University, Tbilisi (Georgia)
- 2. Institute of physics of Azerbaijan National Academy of Sciences, Baku (Azerbaijan)
Description
In the InP crystals doped with sulphur is shown that if from the experiment may determine the carriers effective time of life at different levels of injection then by successive calculations way the time of nonradiative recombination , the electrons and holes occupation then the recombination center can be obtained. Also the parameters of this center as thus the concentration, the level and the carriers occupation section can be determined
Additional details
Additional titles
- Original title (Russian)
- О рекомбинационном центре в фосфиде индия, легированном серой
Publishing Information
- Journal Title
- Fizika (Baku)
- Journal Volume
- 6
- Journal Issue
- 3
- Journal Page Range
- p. 42-44
- ISSN
- 1028-8546
INIS
- Country of Publication
- Azerbaijan
- Country of Input or Organization
- Azerbaijan
- INIS RN
- 35024636
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHARGE CARRIERS; CRYSTAL DOPING; CRYSTALS; ELECTRONS; HOLES; INDIUM; INJECTION; RECOMBINATION; SULFUR
- Descriptors DEC
- ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; INTAKE; LEPTONS; METALS; NONMETALS
Optional Information
- Notes
- 5 refs., 1 tab.