Modelling of novel light sources based on asymmetric heterostructures

For asymmetric quantum-well heterojunction laser sources, processes of carrier injection into quantum wells are considered. In contrast to ordinary quantum-well light sources, active layers in the novel nanocrystalline systems have different thickness and/or compositions. In addition, wide-band gap barrier layers separating the quantum wells may have a linear or parabolic energy potential profile. For various kinds of the structures, mathematical simulation of dynamic response has been carried out. (author). 8 refs, 5 figs