Published June 11, 2003 | Version v1
Journal article Metadata-only

Measurement of Carrier Properties in InSb using Faraday Rotation

Creators

  • 1. Faculty of Engineering, Fukui University, Fukui 910-8507 (Japan)
  • 2. Research Center for Development of Far-Infrared Region, Fukui 910-8507 (Japan)
  • 3. Faculty of Engineering, Yokohama National University, Yokohama 240-8501 (Japan)
  • 4. College of Engineering, Chubu University, Kasugai 487-8501 (Japan)

Description

Carrier properties of n-type InSb doped with tellurium at liquid nitrogen temperature have been estimated by means of transmission of a millimeter wave (119.3 GHz) propagating along a magnetic field up to 4 T. The information of carrier properties is obtained from the Faraday rotation arising from the difference between phase velocities of two circularly polarized components. The advantage of this method lies in the fact that it allows both the electron density and effective mass to be measured simultaneously

Additional details

Identifiers

DOI
10.1063/1.1593887;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
669
Journal Issue
1
Journal Page Range
p. 145-148
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
11. international congress on plasma physics
Acronym
ICPP 2002
Dates
15-19 Jul 2002
Place
Sydney (Australia)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36068233
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGE CARRIERS; DOPED MATERIALS; EFFECTIVE MASS; ELECTRON DENSITY; FARADAY EFFECT; GHZ RANGE; INDIUM ANTIMONIDES; MAGNETIC FIELDS; N-TYPE CONDUCTORS; NITROGEN; PHASE VELOCITY; TELLURIUM
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; ELEMENTS; FREQUENCY RANGE; INDIUM COMPOUNDS; MASS; MATERIALS; NONMETALS; PNICTIDES; SEMICONDUCTOR MATERIALS; SEMIMETALS; VELOCITY

Optional Information

Notes
(c) 2003 American Institute of Physics