Coherent epitaxial growth and superhardness effects of c-TiN/h-TiB2 nanomultilayers
Creators
- 1. State Key Lab of Metal Matrix Composites, Shanghai Jiao Tong University, Shanghai, 200030 (China)
Description
TiN/TiB2 nanomultilayers with different TiB2 layer thicknesses were deposited by the multitarget magnetron sputtering method. Studies show that because of the template effects of the cubic TiN layer, the normally amorphous TiB2 layer crystallizes into a compact hexagonal structure when its thickness is less than 2.9 nm. As a result, the multilayers form a c-TiN/h-TiB2 coherent epitaxial structure with the orientation relationship of {111}TiN//{0001}TiB2, <110>TiN//<1120>TiB2. Correspondingly, the multilayers show a significant hardness enhancement with a maximum hardness of 46.9 GPa. Further increase in TiB2 layer thickness leads to the formation of amorphous TiB2 that blocks the coherent growth of the films, and thus the hardness of the multilayers decreases gradually
Additional details
Identifiers
- DOI
- 10.1063/1.1951047;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 1
- Journal Page Range
- p. 011906-011906.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37017682
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; CRYSTALLIZATION; CRYSTALS; DEPOSITION; FILMS; GRAIN ORIENTATION; HARDNESS; LAYERS; MAGNETRONS; NANOSTRUCTURES; PRESSURE RANGE GIGA PA; SPUTTERING; THICKNESS; TITANIUM BORIDES; TITANIUM NITRIDES; VAPOR PHASE EPITAXY
- Descriptors DEC
- BORIDES; BORON COMPOUNDS; CRYSTAL GROWTH METHODS; DIMENSIONS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EPITAXY; EQUIPMENT; MECHANICAL PROPERTIES; MICROSTRUCTURE; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRIDES; NITROGEN COMPOUNDS; ORIENTATION; PHASE TRANSFORMATIONS; PNICTIDES; PRESSURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2005 American Institute of Physics