Published April 12, 2004 | Version v1
Journal article Metadata-only

Magnetic imprinting of submicron ferromagnetic wires on a diluted magnetic semiconductor quantum well

Creators

  • 1. Institut fuer Physik, Humboldt-Universitaet Berlin, Newtonstrasse 15, D-12489 Berlin (Germany)
  • 2. Werkstoffe der Elektrotechnik, Universitaet Duisburg-Essen, Bismarckstrasse 81, D-47057 Duisburg (Germany)
  • 3. Technische Physik, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany)

Description

Hybrid structures consisting of submicron ferromagnetic dysprosium wires on a diluted magnetic semiconductor quantum well have been prepared and investigated by micro-magnetoluminescence spectroscopy. A magnetic field dependent redshift of the semiconductor band gap just beneath the dysprosium wires with respect to a reference area clearly demonstrates the impact of the magnetic fringe field on the optical properties of the underlying semiconductor

Additional details

Identifiers

DOI
10.1063/1.1695199;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
84
Journal Issue
15
Journal Page Range
p. 2826-2828
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36045094
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CADMIUM COMPOUNDS; DYSPROSIUM; ENERGY GAP; FARADAY EFFECT; FERROMAGNETIC MATERIALS; MAGNETIC FIELDS; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; QUANTUM WELLS; SPECTRAL SHIFT; WIRES; ZINC COMPOUNDS
Descriptors DEC
CRYSTAL GROWTH METHODS; ELEMENTS; EMISSION; EPITAXY; LUMINESCENCE; MAGNETIC MATERIALS; MATERIALS; METALS; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; RARE EARTHS; SEMICONDUCTOR MATERIALS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
(c) 2004 American Institute of Physics.