Published July 14, 2003
| Version v1
Journal article
Strain profiling of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
Creators
- 1. Chartered Semiconductor Manufacturing Ltd., Singapore 738406 (Singapore)
- 2. Department of Physics, National University of Singapore, Singapore 119260 (Singapore)
- 3. Department of Engineering Physics and Mechanics, Kyoto University, Kyoto 606-8501 (Japan)
Description
Strain depth profiles in HfO2 (3 nm)/Si(001) prepared by atomic-layer chemical vapor deposition have been measured using high-resolution Rutherford backscattering spectroscopy in combination with a channeling technique. It is found that the Si lattice is compressed in the vertical direction around the interface. The observed maximum strain is about 1% at the interface and the strained region extends down to ∼3 nm from the interface
Additional details
Identifiers
- DOI
- 10.1063/1.1592310;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 83
- Journal Issue
- 2
- Journal Page Range
- p. 296-298
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35048123
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CHANNELING; CHEMICAL VAPOR DEPOSITION; HAFNIUM OXIDES; INTERFACES; RUTHERFORD SCATTERING; SILICON; SPECTROSCOPY; STRAINS
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELASTIC SCATTERING; ELEMENTS; HAFNIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SCATTERING; SEMIMETALS; SURFACE COATING; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.