Published August 2011
| Version v1
Journal article
Metal-assisted chemical etching using sputtered gold: a simple route to black silicon
Creators
- 1. Department of Chemistry, Carleton University, 1125 Colonel By Drive, Ottawa, ON (Canada)
Description
We report an accessible and simple method of producing 'black silicon' with aspect ratios as high as 8 using common laboratory equipment. Gold was sputtered to a thickness of 8 nm using a low-vacuum sputter coater. The structures were etched into silicon substrates using an aqueous H2O2/HF solution, and the gold was then removed using aqua regia. Ultrasonication was necessary to produce columnar structures, and an etch time of 24 min gave a velvety, non-reflective surface. The surface features after 24 min etching were uniformly microstructured over an area of square centimetres.
Availability note (English)
Available from http://dx.doi.org/10.1088/1468-6996/12/4/045001Additional details
Identifiers
Publishing Information
- Journal Title
- Science and Technology of Advanced Materials
- Journal Volume
- 12
- Journal Issue
- 4
- Journal Page Range
- [4 p.]
- ISSN
- 1468-6996
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43012929
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ASPECT RATIO; ETCHING; GOLD; HYDROFLUORIC ACID; HYDROGEN PEROXIDE; LABORATORY EQUIPMENT; SILICON
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELEMENTS; EQUIPMENT; FLUORINE COMPOUNDS; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; METALS; OXYGEN COMPOUNDS; PEROXIDES; SEMIMETALS; SURFACE FINISHING; TRANSITION ELEMENTS