Published August 2011 | Version v1
Journal article

Metal-assisted chemical etching using sputtered gold: a simple route to black silicon

  • 1. Department of Chemistry, Carleton University, 1125 Colonel By Drive, Ottawa, ON (Canada)

Description

We report an accessible and simple method of producing 'black silicon' with aspect ratios as high as 8 using common laboratory equipment. Gold was sputtered to a thickness of 8 nm using a low-vacuum sputter coater. The structures were etched into silicon substrates using an aqueous H2O2/HF solution, and the gold was then removed using aqua regia. Ultrasonication was necessary to produce columnar structures, and an etch time of 24 min gave a velvety, non-reflective surface. The surface features after 24 min etching were uniformly microstructured over an area of square centimetres.

Availability note (English)

Available from http://dx.doi.org/10.1088/1468-6996/12/4/045001

Additional details

Publishing Information

Journal Title
Science and Technology of Advanced Materials
Journal Volume
12
Journal Issue
4
Journal Page Range
[4 p.]
ISSN
1468-6996

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43012929
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ASPECT RATIO; ETCHING; GOLD; HYDROFLUORIC ACID; HYDROGEN PEROXIDE; LABORATORY EQUIPMENT; SILICON
Descriptors DEC
DIMENSIONLESS NUMBERS; ELEMENTS; EQUIPMENT; FLUORINE COMPOUNDS; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; METALS; OXYGEN COMPOUNDS; PEROXIDES; SEMIMETALS; SURFACE FINISHING; TRANSITION ELEMENTS