Published September 2010 | Version v1
Journal article

Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film

  • 1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

Description

Effects of magnetic field and light illumination on the electrical transport properties of La7/8Sr1/8MnO3 thin film grown on a Si substrate are investigated. The film shows an insulator-metal transition at TP ≈ 191.9 K and a low-temperature resistance minimum at Tmin ≈ 48 K in darkness. Both magnetic field and light illumination shift the insulator-metal transition temperature T P to be higher, while the low-temperature transport properties of the film induced by them show different trends. That is, the magnetic field and light illumination make the Tmin shift to lower and higher temperatures, respectively. The enhancement of both TP and Tmin under light illumination could be explained in terms of photoinduced hole-doping and demagnetization effects of La7/8Sr1/8MnO3

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/27/9/097504

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
27
Journal Issue
9
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU