Published October 12, 1999
| Version v1
Journal article
In situ measurement of fatigue-crack growth rates in a silicon carbide ceramic at elevated temperatures using a D.C. potential system
Description
The understanding of the mechanisms of fatigue-crack propagation in advanced ceramics at elevated temperatures (800 degrees C) has in part been hampered by the experimental difficulty in directly measuring crack lengths, and hence crack-growth rates, at such high temperatures
Additional details
Publishing Information
- Journal Title
- Journal of Testing and Evaluation
- Journal Volume
- 28
- Journal Issue
- 4
- Journal Page Range
- [10 p.]
- ISSN
- 0090-3973
- CODEN
- JTEVAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 33060498
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRACK PROPAGATION; FATIGUE; FRACTURE MECHANICS; MEASURING METHODS; SILICON CARBIDES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; MECHANICAL PROPERTIES; MECHANICS; SILICON COMPOUNDS
Optional Information
- Contract/Grant/Project number
- AC03-76SF00098
- Notes
- Journal Publication Date: Jul. 2000
- Funding organization
- USDOE Director, Office of Science (United States)
- Secondary number(s)
- LBNL--44354