Published May 1988 | Version v1
Report Restricted

Phonon detection with semiconductor thermistors

Creators

Description

We give a status report of the development effort that we have undertaken in Berkeley to detect ballistic phonons with Neutron Transmutation Doped Germanium thermistors. 22 refs., 4 figs

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS, PC A03/MF A01; 1 as DE89001256.

Files

Restricted

The record is publicly accessible, but files are restricted to users with access.

Additional details

Publishing Information

Imprint Pagination
13 p.
Report number
LBL--25725

Conference

Title
2. European workshop on low temperature devices.
Dates
2-6 May 1988.
Place
Annecy (France).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20016664
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DETECTION; ELECTRIC CONDUCTIVITY; GE SEMICONDUCTOR DETECTORS; PHONONS; POWER DENSITY; SPECIFICATIONS; TEMPERATURE DEPENDENCE; THERMISTORS
Descriptors DEC
ELECTRICAL PROPERTIES; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; QUASI PARTICLES; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES

Optional Information

Notes
Portions of this document are illegible in microfiche products.
Secondary number(s)
CONF-8805212--1.