Comparative performance analysis of mixed halide perovskite solar cells with different transport layers and back metal contacts
Creators
- 1. Department of Physics, Nirmalagiri College, Kannur University, Kannur, Kerala 670701 (India)
Description
In this study, SCAPS-1D software is used to model and analyze the performance of various perovskite solar cells (PSCs) with diverse back contact metals, electron transport layers and hole transport layers combined with different mixed halide perovskite absorber materials CH3NH3PbI3−XClX and CH3NH3PbI3−XBrX for X = 1, 2. With CH3NH3PbI3−XClX as the absorber layer, the best performance is obtained for the configuration glass/fluorine-doped tin oxide (FTO)/indium gallium zinc oxide (IGZO)/CH3NH3PbI3−XClX/CuSbS2/Au for X = 1 with a fill factor (FF) of 61.83% and a power conversion efficiency of 13.31%. The device configuration glass/FTO/IGZO/CH3NH3PbI3−XBrX/CuO/Pd for X = 1 shows the best performance with a power conversion efficiency of 15.55% and FF of 71.19% for CH3NH3PbI3−XClX as the absorber layer. The study shows that the optimum total defect density values of the absorber layer, MAPbI3−XClX with X = 1 and X = 2 are 2.5 × 1013 cm−3 and 2.5 × 1014 cm−3, respectively. For the MAPbI3−XBrX absorber layer, with X = 1 and 2, the optimum defect density is found to be 1 × 1015 cm−3. The optimum dopant concentration is found to be 1.0 × 1018 cm−3and 1.0 × 1016 cm−3, respectively, for PSCs with MAPbI3−XClX as the absorber layer, for X = 1 and 2. For PSCs with MAPbI3–XBrX as an absorber layer with X = 1 and 2, the optimum dopant density is found to be 1.0 × 1016 cm−3 each. The device is found to be stable at an operating temperature of 300 K. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6641/abf46cAdditional details
Identifiers
Publishing Information
- Journal Title
- Semiconductor Science and Technology
- Journal Volume
- 36
- Journal Issue
- 6
- Journal Page Range
- [18 p.]
- ISSN
- 0268-1242
- CODEN
- SSTEET
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53050778
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CONCENTRATION RATIO; COPPER OXIDES; DEFECTS; DENSITY; DOPED MATERIALS; EFFICIENCY; ELECTRONS; FILL FACTORS; FLUORINE; GALLIUM; GLASS; HALIDES; INDIUM; LAYERS; PERFORMANCE; PEROVSKITE; SOLAR CELLS; TIN OXIDES; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; DIMENSIONLESS NUMBERS; DIRECT ENERGY CONVERTERS; ELEMENTARY PARTICLES; ELEMENTS; EQUIPMENT; FERMIONS; HALOGEN COMPOUNDS; HALOGENS; LEPTONS; MATERIALS; METALS; MINERALS; NONMETALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PEROVSKITES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PHYSICAL PROPERTIES; SOLAR EQUIPMENT; TIN COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS