Published February 29, 2004 | Version v1
Journal article

Micromachining of large area amorphous carbon membranes prepared by filtered cathodic vacuum arc technique

Description

Currently, there is a strong drive to make micro-electro-mechanical system (MEMS) devices from higher performance materials such as diamond-like carbon or amorphous carbon (a-C) films, due to their excellent tribological properties, low-stiction (hydrophobic) surfaces, chemical inertness and high elastic modulus, compared to that of Si. The hydrogen free a-C films prepared, by Nanyang Technological University's (NTUs) patented filtered cathodic vacuum arc (FCVA) technique, at 100 eV exhibits high fraction of tetrahedral (sp3 bonded) carbon atoms. These films exhibit relatively high hardness, stiffness and wear resistance in addition to low friction and stiction behaviour. However, the primary problem lies in the large intrinsic compressive stress induced during the deposition process. By making use of high substrate pulse bias, we have successfully produced low stress, thick a-C films. The films were then characterised using different equipments to evaluate the stress, microstructure and morphological roughness. Large area a-C membranes, of 2 mmx2 mm in size, have also been fabricated using the low stress, thick film deposited by the above method

Additional details

Identifiers

DOI
10.1016/j.apsusc.2003.07.001;
PII
S0169433203009401;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
223
Journal Issue
4
Journal Page Range
p. 286-293
ISSN
0169-4332
CODEN
ASUSEE

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38090082
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CARBON; DEPOSITION; ELECTROMECHANICS; EV RANGE 10-100; FILMS; HARDNESS; MACHINING; MEMBRANES; MICROSTRUCTURE; WEAR RESISTANCE
Descriptors DEC
ELEMENTS; ENERGY RANGE; EV RANGE; MECHANICAL PROPERTIES; MECHANICS; NONMETALS

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.