Published 1990 | Version v1
Journal article Metadata-only

Influence of electric contacts on silicon conduction in the crossed electric and magnetic fields

Creators

Description

The influence of electric contacts on silicon photoconductivity kinetics in the external magnetic field perpendicular to the electric field is investigated. It is supposed that nonmonotonous photocurrent fall in the silicon is determined by redistribution of electric field in the vicinity of contacts caused exclusion. The decrease of photocurrent fall constant is caused to a great extent by bipolar carriers drift toward electric contacts in comparison with Lorentz force determined carriers shift towards the surface greater surface recombination velocity

Additional details

Additional titles

Original title (Russian)
Влияние неомичности электрических контактов на фотопроводимост' кремния в скрещенных электрическом и магнитном полях

Publishing Information

Journal Title
Izvestiya Akademii Nauk Latvijskoj SSR, Seriya Fizicheskikh i Tekhnicheskikh Nauk
Journal Issue
no.5
Series
Izv. Akad. Nauk Latv. SSR, Ser. Fiz. Tekh. Nauk.
ISSN
0321-1673
CODEN
IALFA

INIS

Country of Publication
Latvia
Country of Input or Organization
USSR
INIS RN
23006638
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHARGE CARRIERS; CROSSED FIELDS; ELECTRIC CONTACTS; LASER RADIATION; MAGNETIC FIELDS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; RELAXATION TIME; SILICON; TIME DEPENDENCE
Descriptors DEC
ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTS; EQUIPMENT; MATERIALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS