Semiconductor heterostructure studies using emerging technologies
Creators
- 1. SORST-JST, Chiyoda, 102-0075 Tokyo (Japan)
- 2. Department of Physics, Tohoku University, Sendai, 980-8578 Miyagi (Japan)
- 3. NTT Basic Research Laboratories, Atsugi, 243-0198 Kanagawa (Japan)
Description
Low-temperature scanning tunnelling microscopy (LT-STM), surface acoustic wave (SAW), and mechanical cantilever are used to measure and manipulate quantum characteristics in semiconductor heterostructures. A nanoscale detection of local density of states is demonstrated for electrons confined in semiconductor quantum wells and dots by a combination of InAs-based heterostructures and LT-STM. The SAW is used to realize moving quantum wires and dots in semiconductor heterostructures. A synchronized optical measurement confirms two types of modulation, i.e. bandgap and potential modulations. A combination of mechanical cantilever and quantum heterostructures gives a new mechanical functionality and a novel tool to analyse quantum transport characteristics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssb.200675622Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. B, Basic Research
- Journal Volume
- 244
- Journal Issue
- 8
- Series
- Special issue: Frontiers in molecular-beam epitaxy toward novel devices
- Journal Page Range
- p. 2988-3001
- ISSN
- 0370-1972
- CODEN
- PSSBBD
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 38074419
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; BAND THEORY; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; EMISSION SPECTRA; ENERGY GAP; ENERGY SPECTRA; ENERGY-LEVEL DENSITY; FABRICATION; GALLIUM ANTIMONIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; MODULATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PIEZOELECTRICITY; QUANTUM DOTS; QUANTUM WELLS; QUANTUM WIRES; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; SPATIAL DISTRIBUTION; SUPPORTS; SURFACES; TEMPERATURE RANGE 0000-0013 K; TIME DEPENDENCE; VISIBLE SPECTRA
- Descriptors DEC
- ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DISTRIBUTION; ELECTRICAL PROPERTIES; ELECTRICITY; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MECHANICAL STRUCTURES; MICROSCOPY; NANOSTRUCTURES; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; SEMICONDUCTOR JUNCTIONS; SPECTRA; TEMPERATURE RANGE
Optional Information
- Notes
- With 15 figs., 34 refs.. SICI: 0370-1972(200708)244:8<2988::AID-PSSB200675622>3.0.TX;2-7