Published August 2007 | Version v1
Journal article

Semiconductor heterostructure studies using emerging technologies

  • 1. SORST-JST, Chiyoda, 102-0075 Tokyo (Japan)
  • 2. Department of Physics, Tohoku University, Sendai, 980-8578 Miyagi (Japan)
  • 3. NTT Basic Research Laboratories, Atsugi, 243-0198 Kanagawa (Japan)

Description

Low-temperature scanning tunnelling microscopy (LT-STM), surface acoustic wave (SAW), and mechanical cantilever are used to measure and manipulate quantum characteristics in semiconductor heterostructures. A nanoscale detection of local density of states is demonstrated for electrons confined in semiconductor quantum wells and dots by a combination of InAs-based heterostructures and LT-STM. The SAW is used to realize moving quantum wires and dots in semiconductor heterostructures. A synchronized optical measurement confirms two types of modulation, i.e. bandgap and potential modulations. A combination of mechanical cantilever and quantum heterostructures gives a new mechanical functionality and a novel tool to analyse quantum transport characteristics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200675622

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
244
Journal Issue
8
Series
Special issue: Frontiers in molecular-beam epitaxy toward novel devices
Journal Page Range
p. 2988-3001
ISSN
0370-1972
CODEN
PSSBBD

Optional Information

Notes
With 15 figs., 34 refs.. SICI: 0370-1972(200708)244:8<2988::AID-PSSB200675622>3.0.TX;2-7