Published September 2013
| Version v1
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Simulation of hydrogen transport processes in c-Si undergoing hydrogen plasma treatment
Creators
- 1. Department of physics, Belarusian state univ. of informatics and radioelectronics, Minsk (Belarus)
Description
The model of stress-mediated diffusion of interstitial hydrogen atoms in c-Si has been developed. Modelling of the available experimental data has been performed and characteristic values of the coefficients for the transport processes of hydrogen atoms in the crystalline silicon containing a buried Si1-xGex layer under conditions of hydrogen plasma treatment has been determined. (authors)
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Additional details
Additional titles
- Original title (Russian)
- Моделирование процессов переноса водорода в кристаллическом кремнии при его обработке в водородсодержащей плазме
Publishing Information
- Imprint Place
- Minsk (Belarus)
- ISBN
- 978-985-553-141-9
- Imprint Title
- Interaction of radiation with solids. Proceedings of the 10th international conference
- Imprint Pagination
- 384 p.
- Journal Page Range
- p. 92-94
- Report number
- INIS-BY--099
Conference
- Title
- 10. International conference 'Interaction of radiation with solids'
- Original Conference Title
- 10. Mezhdunarodnaya konferentsiya 'Vzaimodejstvie izluchenij s tverdym telom'
- Dates
- 24-27 Sep 2013
- Place
- Minsk (Belarus)
INIS
- Country of Publication
- Belarus
- Country of Input or Organization
- Belarus
- INIS RN
- 46131551
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- GERMANIUM COMPOUNDS; HYDROGEN ADDITIONS; INTERSTITIALS; LAYERS; MOBILITY; MONOCRYSTALS; PLASMA; SILICON; SILICON COMPOUNDS; SIMULATION
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTS; POINT DEFECTS; SEMIMETALS
Optional Information
- Notes
- 7 refs., 1 fig. Imprint:Vzaimodejstvie izluchenij s tverdym telom. Materialy 10 Mezhdunarodnoj konferentsii