Published May 21, 2007 | Version v1
Journal article

Effect of an exchange tab on the magnetization switching process of magnetic nanowires

  • 1. Data Storage Institute, 5 Engineering Drive 1, Singapore 117608, Singapore (Singapore)
  • 2. Department of Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore (Singapore)

Description

We report on a systematic electrical transport study of the effect of an exchange tab on the magnetization switching process of magnetic nanowires. The exchange tab consists of a small segment of a ferromagnetic layer coupled antiferromagnetically to a small portion of the magnetic wire via a thin Ru spacer. The magnetic force microscopy image shows that the exchange tab has a single domain structure. The magnetoresistance of exchange tab stabilized nanowires is characterized by a reversible switching process in both the longitudinal and the transverse field directions. The former is in sharp contrast to the magnetoresistance curve of nanowires with the same geometry but without an exchange tab. The dependence of the exchange field on the tab size has also been investigated, which revealed that a shorter tab generally leads to a stronger coupling between the tab and the nanowire. Micromagnetic modelling has been carried out to interpret the experimental results

Additional details

Identifiers

DOI
10.1088/0022-3727/40/10/S03;
PII
S0022-3727(07)37634-1;

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
40
Journal Issue
10
Journal Page Range
p. 3011-3015
ISSN
0022-3727
CODEN
JPAPBE

Conference

Title
Symposium P - Nanoscale magnets: Synthesis, self-assembly, properties and applications
Acronym
Fall 2006 meeting of the Materials Research Society
Dates
27 Nov - 1 Dec 2006
Place
Boston, MA (United States)