Published October 21, 2005
| Version v1
Journal article
Field induced polarisation and relaxation of tungsten oxide thick films
Creators
- 1. Institute of Applied Physics, Justus-Liebig-Universitaet Giessen, D-35392 Giessen (Germany)
Description
We have investigated the time dependent conductance of a WO3 film (∼ 700 K) after a voltage step. From the beginning to some 100 ms, the region next to the positive electrode shows a strong increase in resistance. The region next to the negative electrode shows a decrease in resistance. A possible explanation for this first effect is the depletion (respectively accumulation) of mobile donors. After 10 s, a decrease in resistance next to the positive electrode is observed. The region next to the negative electrode shows an increase in resistance. The resistance of the two regions nearly meets its value prior to the perturbation. A possible explanation for this second effect is desorption (respectively adsorption) of charged surface oxygen
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2005.04.009;
- PII
- S0040-6090(05)00344-5;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 490
- Journal Issue
- 1
- Journal Page Range
- p. 86-93
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 4. international workshop on semiconductor gas sensors
- Acronym
- SGS 2004
- Dates
- 19-23 Sep 2004
- Place
- Ustron (Poland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37023060
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ADSORPTION; DESORPTION; ELECTRIC POTENTIAL; ELECTRODES; IMPEDANCE; OXYGEN; POLARIZATION; RELAXATION; THIN FILMS; TIME DEPENDENCE; TUNGSTEN OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; FILMS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SORPTION; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.