Electrical activation processes of P+ ions channeled along the [110] axis of silicon

Phosphorus ions at energies of 100, 200 and 300 keV and doses between 5 x 1014 and 5 x 1015 at/cm2 have been implanted into silicon crystals along the [110] axis. Electrical carriers distributions have been determined by means of differential sheet resistivity and Hall-effect together with the anodic oxidation stripping technique. Isochronal recovery of the number of carriers/cm2 has also been performed, in the temperature range 25 to 9000C. Rutherford backscattering analysis has been used to determine the radiation damage distributions produced by the implanted atoms; 300 keV proton back-scattering spectra as a function of annealing temperature has also given information on the damage recovery processes. The shape of carriers profiles, as a function of annealing temperature between 100 and 9000C, has been compared with the damage distribution due to the implantation itself and correlation between phosphorus electrical activation and damage has been shown. It seems possible to single out three different regions in the carriers depth distributions with different mechanisms of phosphorus electrical activation. (U.K.)