Propagation delay measurements from a timing sampler intended for use in space
Creators
- 1. Jet Propulsion Lab., California Institute of Technology, Pasadena, CA (USA)
Description
This paper describes a 3-μm CMOS timing sampler which is a test circuit designed into the JPL CRRES chip to be flown on the combined Release and Radiation Effects Satellie (CRRES). The timing sampler consists of 64 inverter-pair stages with sampling latches and decoder circuitry. The sampler is used to measure inverter-pair propagation delays, which are nominally 2.5 nanoseconds, with a resolution of 100 picoseconds. A simple model was developed to explain the radiation-induced inverter-pair delay shifts in terms of radiation-induced MOSFET-threshold voltage shifts and effective nodal capacitances. The magnitude of the shift in pair delay with radiation was estimated at the point where the n-MOSFET threshold voltage became zero. For a 0.7-volt threshold shift, the pair-delay increased from its preradiation value by 360 picoseconds for a rising step input and decreased by 190 picoseconds for a falling step input
Additional details
Publishing Information
- Journal Title
- IEEE Trans. Nucl. Sci.
- Journal Volume
- NS-34
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1470-1473
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 28-31 Jul 1987.
- Place
- Snowmass Village, CO (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19087777
- Subject category
- S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- MOS TRANSISTORS; MOSFET; PERFORMANCE TESTING; RADIATION EFFECTS; SAMPLING; SATELLITES; SPECIFICATIONS
- Descriptors DEC
- FIELD EFFECT TRANSISTORS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-8707112--.