Published July 1, 2018 | Version v1
Journal article

Electronic Structure and Optical Properties of C-Doped Ca2Si

  • 1. College of Electronic and Information Engineering, Anshun University, Anshun, Guizhou 561000 (China)
  • 2. College of Mathematics Science, Anshun University, Anshun, Guizhou 561000 (China)

Description

A first-principle method is used to calculate the geometric structure, energy band structure, electronic state density, and optical properties of C-doped Ca2Si. Results show that volume of Ca2Si decreases, and band gap increases after doping with C. The optical properties of Ca2Si after C doping change as follows: ε1(0) and refractivity index increase, whereas ε2(ω), extinction coefficient, absorption, and reflectivity decrease. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1757-899X/381/1/012015

Additional details

Publishing Information

Journal Title
IOP Conference Series. Materials Science and Engineering (Online)
Journal Volume
381
Journal Issue
1
Journal Page Range
[6 p.]
ISSN
1757-899X

Conference

Title
4. Annual International Workshop on Materials Science and Engineering
Acronym
IWMSE2018
Dates
18-20 May 2018
Place
Xi'an (China)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
52091812
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION; CALCIUM SILICIDES; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; GEOMETRY; REFLECTIVITY; REFRACTIVE INDEX
Descriptors DEC
ALKALINE EARTH METAL COMPOUNDS; CALCIUM COMPOUNDS; MATERIALS; MATHEMATICS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS; SORPTION; SURFACE PROPERTIES