Published July 1, 2018
| Version v1
Journal article
Electronic Structure and Optical Properties of C-Doped Ca2Si
- 1. College of Electronic and Information Engineering, Anshun University, Anshun, Guizhou 561000 (China)
- 2. College of Mathematics Science, Anshun University, Anshun, Guizhou 561000 (China)
Description
A first-principle method is used to calculate the geometric structure, energy band structure, electronic state density, and optical properties of C-doped Ca2Si. Results show that volume of Ca2Si decreases, and band gap increases after doping with C. The optical properties of Ca2Si after C doping change as follows: ε1(0) and refractivity index increase, whereas ε2(ω), extinction coefficient, absorption, and reflectivity decrease. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1757-899X/381/1/012015Additional details
Identifiers
Publishing Information
- Journal Title
- IOP Conference Series. Materials Science and Engineering (Online)
- Journal Volume
- 381
- Journal Issue
- 1
- Journal Page Range
- [6 p.]
- ISSN
- 1757-899X
Conference
- Title
- 4. Annual International Workshop on Materials Science and Engineering
- Acronym
- IWMSE2018
- Dates
- 18-20 May 2018
- Place
- Xi'an (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52091812
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION; CALCIUM SILICIDES; DENSITY; DOPED MATERIALS; ELECTRONIC STRUCTURE; GEOMETRY; REFLECTIVITY; REFRACTIVE INDEX
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CALCIUM COMPOUNDS; MATERIALS; MATHEMATICS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SILICIDES; SILICON COMPOUNDS; SORPTION; SURFACE PROPERTIES