Published November 25, 2011 | Version v1
Journal article Metadata-only

High output nanogenerator based on assembly of GaN nanowires

Creators

  • 1. School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)
  • 2. Department of Materials Science and Engineering, National Tsing-Hua University, Hsin-Chu, Taiwan 30013 (China)

Description

GaN nanowires (NWs) were synthesized through a vapor–liquid–solid (VLS) process. Based on structural analysis, the c-axis of the NW was confirmed to be perpendicular to the growth direction. Nanogenerators (NGs) fabricated by rational assembly of the GaN NWs produced an output voltage up to 1.2 V and output current density of 0.16 µA cm−2. The measured performance of the GaN NGs was consistent with the calculations using finite element analysis (FEA).

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/22/47/475401

Additional details

Identifiers

DOI
10.1088/0957-4484/22/47/475401;
PII
S0957-4484(11)01861-7;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
22
Journal Issue
47
Journal Page Range
[5 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43099815
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
CURRENT DENSITY; FINITE ELEMENT METHOD; GALLIUM NITRIDES; LIQUIDS; PERFORMANCE; QUANTUM WIRES; VAPORS
Descriptors DEC
CALCULATION METHODS; FLUIDS; GALLIUM COMPOUNDS; GASES; MATHEMATICAL SOLUTIONS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL SOLUTION; PNICTIDES