Published August 1, 1984
| Version v1
Journal article
Effects of light and modulation frequency on spin-dependent trapping at silicon grain boundaries
Creators
- 1. Sandia National Laboratories, Albuquerque, New Mexico 87185
Description
The effects of measurement frequency and illumination on spin-dependent trapping at trivalent silicon centers in a silicon grain boundary have been studied. Measurement frequency effects are quantitatively understood in terms of an electronic relaxation time for the traps. Illumination results suggest most of the trivalent silicon centers in the grain boundary are in a negatively charged, diamagnetic state
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B: Condens. Matter
- Journal Volume
- 30
- Journal Issue
- 3
- Series
- Phys. Rev., B: Condens. Matter.
- Journal Page Range
- 1544-1546
- ISSN
- 0163-1829
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 16033928
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC POTENTIAL; ELECTRON SPIN RESONANCE; ENERGY GAP; FREQUENCY MEASUREMENT; GRAIN BOUNDARIES; PHOTON COLLISIONS; SILICON; TRAPPING; TRAPS
- Descriptors DEC
- COLLISIONS; CRYSTAL STRUCTURE; ELEMENTS; MAGNETIC RESONANCE; MICROSTRUCTURE; RESONANCE; SEMIMETALS