Diffusive processes in films systems (Ni, SiO2)/Cu and (Cu, SiO2)/Ni

The SIMS diffusive processes in the film systems (Ni, SiO2)/Cu/S and (Cu, SiO2)/Ni/S (S-substrate) are explored by a method, where coverage is an overhead layer (the film by a thickness ≤5 nm). It is shown that already at causing of overlayer on the surface of base tape actively there are diffusive processes. At temperature 550-630 K to the effective coefficient of the condensation-stimulated diffusion exceeds the coefficient of thermal diffusion.