Exploring interface morphology of a deeply buried layer in periodic multilayer
- 1. Homi Bhabha National Institute, Anushaktinagar, Mumbai-400094, Maharashtra (India)
- 2. Indus Synchrotrons Utilization Division, Raja Ramanna Centre for Advanced Technology, Indore-452013, Madhya Pradesh (India)
Description
Long-term durability of a thin film device is strongly correlated with the nature of interface structure associated between different constituent layers. Synthetic periodic multilayer structures are primarily employed as artificial X-ray Bragg reflectors in many applications, and their reflection efficiency is predominantly dictated by the nature of the buried interfaces between the different layers. Herein, we demonstrate the applicability of the combined analysis approach of the X-ray reflectivity and grazing incidence X-ray fluorescence measurements for the reliable and precise determination of a buried interface structure inside periodic X-ray multilayer structures. X-ray standing wave field (XSW) generated under Bragg reflection condition is used to probe the different constituent layers of the W- B4C multilayer structure at 10 keV and 12 keV incident X-ray energies. Our results show that the XSW assisted fluorescence measurements are markedly sensitive to the location and interface morphology of a buried layer structure inside a periodic multilayer structure. The cross sectional transmission electron microscopy results obtained on the W-B4C multilayer structure provide a deeper look on the overall reliability and accuracy of the XSW method. The method described here would also be applicable for nondestructive characterization of a wide range of thin film based semiconductor and optical devices.
Additional details
Identifiers
- DOI
- 10.1063/1.4954710;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 108
- Journal Issue
- 26
- Journal Page Range
- vp.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48035214
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- BORON CARBIDES; BRAGG REFLECTION; ELECTRONS; FLUORESCENCE; HARDNESS; INTERFACES; KEV RANGE 10-100; MORPHOLOGY; PERIODICITY; REFLECTIVITY; SEMICONDUCTOR MATERIALS; SERVICE LIFE; STANDING WAVES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WEAR RESISTANCE
- Descriptors DEC
- BORON COMPOUNDS; CARBIDES; CARBON COMPOUNDS; ELECTRON MICROSCOPY; ELEMENTARY PARTICLES; EMISSION; ENERGY RANGE; FERMIONS; FILMS; KEV RANGE; LEPTONS; LIFETIME; LUMINESCENCE; MATERIALS; MECHANICAL PROPERTIES; MICROSCOPY; OPTICAL PROPERTIES; PHOTON EMISSION; PHYSICAL PROPERTIES; REFLECTION; SURFACE PROPERTIES; VARIATIONS
Optional Information
- Notes
- (c) 2016 Author(s)