Published October 1, 1979
| Version v1
Journal article
Vacancies and the chemical trapping of hydrogen in silicon
Description
The first evidence for SiH1-like centers in crystalline Si (c-Si) is presented from infrared measurements of H (D) implanted at 80 K. In contrast to SiH1 centers in amorphous Si (a-Si) which are stable to approx. = 700 K, the crystalline band anneals below 300 K with an activation energy and illumination enhancement that are characteristic of the Si vacancy. These results relate specific defects for implanted H in c-Si to previous observations for H in a-Si
Additional details
Publishing Information
- Journal Title
- Phys. Rev. Lett.
- Journal Volume
- 43
- Journal Issue
- 14
- Series
- Phys. Rev. Lett.
- Journal Page Range
- 1030-1033
- ISSN
- 0031-9007
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11517093
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ABSORPTION SPECTRA; ACTIVATION ENERGY; AMORPHOUS STATE; ANNEALING; COLLISIONS; CRYSTALS; ELECTRICAL PROPERTIES; HYDROGEN; INTERACTIONS; INTERSTITIALS; ION IMPLANTATION; KEV RANGE 10-100; LOW TEMPERATURE; PHYSICAL RADIATION EFFECTS; SILANES; SILICON; TRAPPING; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; ENERGY; ENERGY RANGE; HEAT TREATMENTS; HYDRIDES; HYDROGEN COMPOUNDS; KEV RANGE; NONMETALS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS; SILICON COMPOUNDS; SPECTRA