Published February 1993
| Version v1
Journal article
On the composition and structure of In-ZnTe contact
- 1. AN Belorusskoj SSR, Minsk (Belarus). Inst. Fiziki
Description
The distribution of the components in the thin-film surface-barrier structure of In-ZnTe has been studied by the Rutherford backscattering method. In the process of vacuum evaporation of a metal film the cation and anion atoms of the semiconductor substrate go onto the film surface and oxidation occurs. It has been found that at mixing of the components the stoichiometric composition is practically preserved
Additional details
Additional titles
- Original title (Russian)
- О составе и структуре контакта Ин-ZnTe
Publishing Information
- Journal Title
- Poverkhnost': Fizika, Khimiya, Mekhanika
- Journal Issue
- no.2
- Journal Page Range
- p. 94-96.
- ISSN
- 0207-3528
- CODEN
- PFKMDJ
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 25027616
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BACKSCATTERING; DIFFUSION; INDIUM; INTERFACES; ION BEAMS; MONOCRYSTALS; OXIDATION; SEMICONDUCTOR JUNCTIONS; SPRAYED COATINGS; STOICHIOMETRY; THIN FILMS; ZINC TELLURIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHEMICAL REACTIONS; COATINGS; CRYSTALS; ELEMENTS; FILMS; METALS; SCATTERING; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS