Published 1995
| Version v1
Miscellaneous
GIXR method application for surface topography determination of GaAs and AlAs crystals
Description
Short communication. 1 ref
Additional details
Additional titles
- Original title (Polish)
- Zastosowanie metody GIXR do okreslania nierownosci powierzchni krysztalow GaAs i AlAs
- Augmented title (English)
- GIXR means Grazing Incident X-ray Reflectivity
Publishing Information
- Publisher
- Instytut Technologii Elektronowej.
- Imprint Place
- Warsaw (Poland)
- Imprint Title
- Abstracts of 3. Seminar Surface and Thin Layer Structures
- Imprint Pagination
- 116 p.
- Journal Page Range
- p. 55.
Conference
- Title
- 3. Seminar on Surface and Thin Layer Structures.
- Original Conference Title
- 3. Seminarium Powierzchnia i Struktury Powierzchniowe
- Dates
- 23-26 Oct 1995.
- Place
- Spala (Poland).
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 28080286
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; MEETINGS; MONOCRYSTALS; REFLECTIVITY; ROUGHNESS; SURFACE AREA; X RADIATION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTALS; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; IONIZING RADIATIONS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SURFACE PROPERTIES
Optional Information
- Notes
- Imprint:3. Seminarium Powierzchnia i Struktury Cienkowarstwowe. Streszczenia.