Photoelectron Si 2p-spectrum of superfine CoSi2 layers obtained on Si(100)2 x 1 surface

The process of solid-phase synthesis of CoSi2 superfine films on the silicon surface Si(100)2 x 1 is studied through the method of high-resolution photoelectron spectroscopy (∼ 140 meV) with application of synchrotron radiation (130 eV). The evolution of Si 2p-spectra is studied both by cobalt application on the samples surface at the room temperature and by their subsequent annealing. It is shown that Co adsorption on Si(100)2 x 1 is accompanied by the loss of silicon initial surface reconstruction, however it does not lead to formation of the stable CoSi2-like phase. Co-Si solid solution broken film grows by the further increase in the quantity of the sprayed cobalt (at the range up to six monolayers) on the silicon surface with the chemosorbed cobalt. The solid phase reaction of CoSi2 formation begins at the temperature close to 250 deg C and finishes after samples annealing approximately up to the temperature of ∼ 350 deg C