Published June 23, 2003
| Version v1
Journal article
Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
Creators
- 1. Department of Electrical Engineering and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan (China)
Description
We report the effects of In0.33Ga0.67As capping layers on the structural and optical properties of InAs self-organized quantum dots grown by gas-source molecular-beam epitaxy. With different deposition methods for the InGaAs capping layer, the quantum-dot density can be adjusted from 2.3x1010 to 1.7x1011 cm-2. As-cleaved 3.98-mm-long diode laser using triple stacks of InAs quantum dots with the capping layer grown by GaAs/InAs sequential binary growth demonstrates an emission wavelength of 1305 nm and a threshold current density of 360 A/cm2. A ground-state saturation gain of 16.6 cm-1 is achieved due to the high dot density
Additional details
Identifiers
- DOI
- 10.1063/1.1585125;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 82
- Journal Issue
- 25
- Journal Page Range
- p. 4477-4479
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35048073
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CURRENT DENSITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; QUANTUM DOTS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; MATERIALS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- (c) 2003 American Institute of Physics.