Published October 1974 | Version v1
Journal article Metadata-only

Reply to ''Comments on 'Luminescence from electron-irradiated silicon' ''

Creators

  • 1. Department of Physics, Lehigh University, Bethlehem, Pennsylvania 18015

Description

Recent experimental and analytical results indicate that the 0.97-eV luminescence from irradiated Si is characterized by monoclinic symmetry. The assignment of symmetry class for other luminescence peaks in this material is incomplete.

Additional details

Identifiers

DOI
10.1063/1.1663108;

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
45
Journal Issue
10
Series
J. Appl. Phys.
Journal Page Range
4655-4655
ISSN
0021-8979

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
6165166
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ELECTRON BEAMS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; POLARIZATION; SILICON; STRESSES; SYMMETRY; VIBRATIONAL STATES
Descriptors DEC
BEAMS; ELEMENTS; ENERGY LEVELS; EXCITED STATES; LEPTON BEAMS; LUMINESCENCE; PARTICLE BEAMS; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
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