Published October 29, 2010
| Version v1
Journal article
Epitaxial Ni films for ballistic ferromagnetic nanostructures
Description
Nickel films of 170 nm thick were grown on sapphire substrates of the A, R and C orientations. Their electric characteristics and surface morphology were studied. Peculiarities of the film growth and optimum growth conditions for films of high electron mobility were determined. Nickel films grown on the sapphire A-plane with a high residual electron mean free path were found suitable for the fabrication of ballistic planar ferromagnetic nanostructures. Ballistic electron transport was observed in cross-type epitaxial Ni (111) nanostructures.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2010.07.028Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2010.07.028;
- PII
- S0040-6090(10)00978-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 519
- Journal Issue
- 1
- Journal Page Range
- p. 527-535
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42067243
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRON MOBILITY; ELECTRONS; EPITAXY; FABRICATION; MAGNETORESISTANCE; MEAN FREE PATH; MORPHOLOGY; NANOSTRUCTURES; NICKEL; ORIENTATION; SAPPHIRE; SURFACES; THIN FILMS
- Descriptors DEC
- CORUNDUM; CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FILMS; LEPTONS; METALS; MINERALS; MOBILITY; OXIDE MINERALS; PARTICLE MOBILITY; PHYSICAL PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.