Published October 1, 2016 | Version v1
Journal article

Effect of oxide barrier height in spin dependent tunneling in MTJ of FeO-MgO multilayer structure

  • 1. Centre for Nanotechnology, Indian Institute of Technology Guwahati (India)

Description

We study the spin dependent tunneling current properties through oxide multilayers in a magnetic tunnel junction (MTJ). For this purpose, nonequilibrium Green's function approach along-with the density-functional theory have been applied. We employed three structural models of FeO-MgO-FeO multi-layer with three different width of FeO and MgO layer. An atomistic model is considered to describe the effect of oxide multilayers of different heights. Spin dependent study for tunneling reveals that the parallel spin shows higher tunneling current whereas anti-parallel spin conducts very less. Further, the lowest tunneling current is obtained for the case where the FeO and MgO each has 3 atomic layers of height whereas the tunneling current is highest in 4 atomic layers of FeO/1 atomic layers of MgO/4 atomic layers of MgO multilayer structure. Importantly, when the MgO or FeO layers are increased or decreased from this level, the tunneling current decreases significantly. The study reveals that the layer height in the tunneling domain can be important factor for tuning and adjusting tunneling current in the nanoscale regime of oxide layer thickness. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/759/1/012051

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
759
Journal Issue
1
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
27. IUPAP Conference on Computational Physics
Acronym
CCP2015
Dates
2-5 Dec 2015
Place
Guwahati (India)