Published January 18, 2013 | Version v1
Journal article

Origin of the transition voltage in gold–vacuum–gold atomic junctions

  • 1. Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)
  • 2. School of Physics and CRANN, Trinity College, Dublin 2 (Ireland)

Description

The origin and the distance dependence of the transition voltage of gold–vacuum–gold junctions are investigated by employing first-principles quantum transport simulations. Our calculations show that atomic protrusions always exist on the electrode surface of gold–vacuum–gold junctions fabricated using the mechanically controllable break junction (MCBJ) method. The transition voltage of these gold–vacuum–gold junctions with atomically sharp electrodes is determined by the local density of states (LDOS) of the apex gold atom on the electrode surface rather than by the vacuum barrier shape. More specifically, the absolute value of the transition voltage roughly equals the rising edge of the LDOS peak contributed by the 6p atomic orbitals of the gold atoms protruding from the electrode surface, whose local Fermi level is shifted downwards when a bias voltage is applied. Since the LDOS of the apex gold atom depends strongly on the exact shape of the electrode, the transition voltage is sensitive to the variation of the atomic configuration of the junction. For asymmetric junctions, the transition voltage may also change significantly depending on the bias polarity. Considering that the occurrence of the transition voltage requires the electrode distance to be larger than a critical value, the interaction between the two electrodes is actually rather weak. Consequently, the LDOS of the apex gold atom is mainly determined by its local atomic configuration and the transition voltage only depends weakly on the electrode distance as observed in the MCBJ experiments. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-4484/24/2/025203

Additional details

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
24
Journal Issue
2
Journal Page Range
[6 p.]
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44046178
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
ASYMMETRY; DISTANCE; ELECTRIC POTENTIAL; ELECTRODES; FERMI LEVEL; GOLD; INTERACTIONS; NANOSTRUCTURES; SHAPE; SIMULATION; SURFACES
Descriptors DEC
ELEMENTS; ENERGY LEVELS; METALS; TRANSITION ELEMENTS