Published 1997
| Version v1
Book
Development of a PC based instrument for Hall measurements of electron irradiated silicon
- 1. Univ. of Pune, Pune (India). Dept. of Electronic Science
- 2. Poona Univ., Pune (India). Dept. of Physics
Description
The transport properties of semiconductors play an important role in semiconductor technology because of its many applications in devices. Irradiation with electrons on the sample produces complex lattice defects which acts as traps or recombination centers. They have energy levels within band gap. Here the hall effect is chosen because from the independent measurement of hall voltages both carrier concentration and mobility can be determined. This report describes fully automated commercial PC based Hall measurement system. 10 refs., 3 figs
Additional details
Publishing Information
- Publisher
- Tata McGraw-Hill Publishing Company Limited.
- Imprint Place
- New Delhi (India)
- ISBN
- 0-07-463147-0
- Imprint Title
- Proceedings of the symposium on advances in nuclear and allied instrumentation
- Imprint Pagination
- 579 p.
- Journal Page Range
- p. 509-513.
Conference
- Title
- advances in instrumentation.
- Acronym
- SANAI-97
- Dates
- 5-7 Feb 1997.
- Place
- Mumbai (India).
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 28041217
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CRYSTAL DEFECTS; DATA ACQUISITION SYSTEMS; ELECTRIC CONDUCTIVITY; ELECTRONS; FLOWSHEETS; HALL EFFECT; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- CRYSTAL STRUCTURE; DIAGRAMS; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; INFORMATION; LEPTONS; MATERIALS; PHYSICAL PROPERTIES; RADIATION EFFECTS