Influence of tungsten dopants on structural and electrical properties of sol–gel derived V${}_2$O${}_5$-MoO${}_3$ nanocrystalline films

Tungsten oxide (WO${}_3$) doped V${}_2$O${}_5$·MoO${}_3$ thin films deposited on glass substrates using dip coating technique were prepared by a Sol–Gel method. Vanadium pentoxide, Molybdenum oxide and Tungsten oxide powder were used as starting precursors. The influence of different doping percentages of (W) has been investigated in X-ray diffraction, High-resolution transmission electron microscopy and electrical measurement. The structure of the obtained nanocrystals were identify by using X-ray diffraction and transmission electron micrograph. The obtained nanorods have lengths up to 220 nm and width of 15–45 nm. The electrical conductivity applied on the sample under investigation. By increasing tungsten (W) concentration the electrical conductivity was found to be increased and the activation energy decreased. Non-adiabatic SPH was found by analysis the electrical conduction.