Published December 15, 2009 | Version v1
Journal article

Defect structure of zinc doped silicon studied by X-ray diffuse scattering method

  • 1. Moscow State Institute of Steel and Alloys, Leninskiy prosp., 4, Moscow 119049 (Russian Federation)
  • 2. Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskiy prosp., 34, Moscow 117218 (Russian Federation)

Description

The results of investigation of microdefects (MDs) in Zn doped n-type Si by X-ray diffuse scattering (XRDS) method are presented. Experimental samples were made by a high-temperature diffusion annealing of Zn with subsequent quenching and tempering. The crystal lattice of the samples is found to contain spherical MDs of vacancy type and plane shape MDs of interstitial type with average radius about 0,1 and 2 μm. The MDs average radius and their type depend on Zn doping level and thermal treatment after compensation diffusion.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2009.08.301

Additional details

Identifiers

DOI
10.1016/j.physb.2009.08.301;
PII
S0921-4526(09)00888-6;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
404
Journal Issue
23-24
Journal Page Range
p. 4630-4633
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
25. international conference on defects in semiconductors
Dates
20-24 Jul 2009
Place
St. Petersburg (Russian Federation)

Optional Information

Copyright
Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.