Damage induced in high energy helium-implanted 4H-SiC

Damage in 4H-SiC helium-implanted at room temperature and high energy with fluences ranging between 2 x 1016 and 1 x 1017 cm-2 was studied by combining transmission electron microscopy (TEM) and X-ray diffraction. The threshold damage energy for full amorphization has been estimated at 6-7 x 1021 keV cm-3. Along the ion path X-ray diffraction curves show a lattice strain gradient perpendicular to the surface