Published 1984 | Version v1
Book

X-ray lithography using synchrotron radiation

  • 1. Electrotechnical Lab., Sakura, Ibaraki (Japan)

Description

Present status of the research on the synchrotron radiation(SR) lithography is reviewed putting emphasis on the basic factors which determine the resolution and the throughout. These are electron energy, mask and resist materials, proximity gap etc. Recent advancements in the development of elementary technologies at principal SR lithography facilities in the world are introduced with the reference to the plan of the compact SR source. (author)

Additional details

Publishing Information

Publisher
Business Cent. for Acad. Soc. Japan.
Imprint Place
Tokyo (Japan)
Imprint Title
Extended abstracts of the 16th (1984 international) conference on solid state devices and materials
Imprint Pagination
730 p.
Journal Page Range
p. 11-14.

Conference

Title
16. (1984 international) conference on solid state devices and materials.
Dates
30 Aug - 1 Sep 1984.
Place
Kobe (Japan).

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
17032183
Subject category
S07: ISOTOPES AND RADIATION SOURCES;
Resource subtype / Literary indicator
Conference
Descriptors DEI
MATERIALS WORKING; RESOLUTION; ROUGHNESS; SYNCHROTRON RADIATION; X RADIATION
Descriptors DEC
BREMSSTRAHLUNG; ELECTROMAGNETIC RADIATION; FABRICATION; IONIZING RADIATIONS; RADIATIONS; SURFACE PROPERTIES