Fe-implanted 6H-SiC Study at fine scale: Elaboration of diluted magnetic semiconductors at room temperature
Description
This PhD thesis focuses on the study of SiC, doped with Fe in order to elaborate a diluted magnetic semiconductor at room temperature for spintronic applications. The iron doping was carried out by ion implantation of multi-energy type (30-160 keV) at different fluences, leading to a 2% constant atomic concentration between 20 to 100 nm, followed by a high temperature annealing in the goal of homogenizing the dopant concentration. The implantation temperature during this process is 550 deg. C, in order to avoid amorphization. The optimization of the magnetic and electronic properties of SiC-Fe, as well as the understanding of the physical mechanisms at the origin of induced magnetism, require a thorough characterization of the microstructure of the implanted materials. The objectives of this work are, on the one hand, to carry out an atomic scale study of the nanostructure according to the implantation conditions (temperature, fluence) and the post-implantation annealing and the other hand, to characterize the magnetic properties of implanted materials. In this work, we have shown by atom probe tomographic, the existence of nanoparticles whose the average size increases with the annealing temperature. The chemical mapping of the nanoparticles shows the presence of the Fe-rich phases for the annealed samples. Magnetic study (Moessbauer spectrometry and Squid) shows the ferromagnetic contribution is due to the magnetic nanoparticles and/or the diluted Fe atoms in the matrix. The correlation between structural and magnetic properties allowed showing that diluted Fe atoms and substitute to Si sites contribute to the ferromagnetic contribution below 300 K. In coupling many characterization techniques in order to give a detailed description of the different studied samples, we have shown that the size and nature of the phase present in the nanoparticles depend on the implantation conditions and the annealing temperatures and consequently it is necessary to anneal our samples at high temperature to reveal ferromagnetic order. (author)
Abstract (French)
Ce travail de these porte sur l'etude du carbure de silicium, dope avec du fer dans le but de realiser un semi-conducteur magnetique dilue a temperature ambiante pour des applications a la spintronique. Le dopage en fer a ete realise par implantation ionique de type multi-energie (30 - 160 keV) a differentes fluences, conduisant a une concentration atomique constante de 2 % de 20 a 100 nm. Il a ete suivi d'un recuit a haute temperature dans le but d'homogeneiser la concentration en dopants. Les implantations se sont deroulees a une temperature de 550 deg. C. L'optimisation des proprietes magnetiques et electroniques du SiC-Fe, de meme que la comprehension des mecanismes physiques a l'origine du magnetisme induit, ont necessite une caracterisation poussee de la microstructure des materiaux implantes. Les objectifs de ce travail ont ete d'une part, de realiser une etude a l'echelle atomique de la nanostructure en fonction des conditions d'implantations (temperature, fluence) et des traitements thermiques post-implantation, et d'autre part, de determiner les proprietes magnetiques des materiaux implantes. Dans ce travail, nous avons montre par Sonde Atomique Tomographique, la presence de nanoparticules dont la taille moyenne augmente avec la temperature de recuit. La cartographie chimique des nanoparticules a permis de reveler l'existence de phases riches en Fe pour les echantillons recuits. L'etude magnetique (spectrometrie Moessbauer et Squid) a montre que la contribution ferromagnetique est due principalement aux nanoparticules magnetiques et/ ou aux atomes de fer magnetiques dilues dans la matrice. La correlation entre les proprietes structurale et magnetique a permis de montrer que les atomes de fer dilues dans la matrice et substitues sur sites de silicium contribuent au signal ferromagnetique en dessous de 300 K. Nous avons donc montre dans ce travail, que la taille et la nature des phases presentes dans les nanoparticules dependent des conditions d'implantation et des temperatures de recuit et qu'il est necessaire de recuire les echantillons a haute temperature pour faire apparaitre un ordre ferromagnetique. (auteur)
Files
Additional details
Additional titles
- Original title (French)
- Etude a l'echelle atomique de l'implantation du fer dans le carbure de silicium (SiC): Elaboration d'un semi-conducteur magnetique dilue a temperature ambiante
Publishing Information
- Imprint Pagination
- 135 p.
- Report number
- FRNC-TH--12912
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 53066500
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- ANNEALING; CURIE POINT; DOPED MATERIALS; FERROMAGNETISM; ION IMPLANTATION; IRON IONS; MAGNETIC SEMICONDUCTORS; MICROSTRUCTURE; MOESSBAUER SPECTROMETERS; NANOSTRUCTURES; SILICON CARBIDES; SQUID DEVICES; TEMPERATURE DEPENDENCE; TOMOGRAPHY
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; DIAGNOSTIC TECHNIQUES; ELECTRONIC EQUIPMENT; EQUIPMENT; FLUXMETERS; GAMMA SPECTROMETERS; HEAT TREATMENTS; IONS; MAGNETISM; MATERIALS; MEASURING INSTRUMENTS; MICROWAVE EQUIPMENT; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS; SPECTROMETERS; SUPERCONDUCTING DEVICES; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE
Optional Information
- Notes
- 90 refs.; Available from the INIS Liaison Officer for France, see the INIS website for current contact and E-mail addresses