Published November 28, 2011
| Version v1
Journal article
Fabrication of large-area ultra-thin single crystal silicon membranes
Creators
- 1. Center for Ion Beam Applications, Physics Department, National University of Singapore, Lower Kent Ridge Road, Singapore 117542 (Singapore)
- 2. NanoCore, National University of Singapore, Singapore 117576 (Singapore)
- 3. Singapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, Singapore 117603 (Singapore)
- 4. Physics Division, Directorate of Science, PINSTECH, P.O. Nilore, Islamabad (Pakistan)
- 5. National Centre for Physics (NCP), Shahdara Valley Road, Islamabad (Pakistan)
Description
Perfectly, crystalline, 55 nm thick silicon membranes have been fabricated over several square millimeters and used to observe transmission ion channeling patterns showing the early evolution of the axially channeled beam angular distribution for small tilts away from the [011] axis. The reduced multiple scattering through such thin layers allows fine angular structure produced by the highly non-equilibrium transverse momentum distribution of the channeled beam during its initial propagation in the crystal to be resolved. The membrane crystallinity and flatness were measured by using proton channeling measurements and the surface roughness of 0.4 nm using atomic force microscopy.
Additional details
Identifiers
- DOI
- 10.1063/1.3665620;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 99
- Journal Issue
- 22
- Journal Page Range
- p. 223105-223105.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43116093
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; FABRICATION; ION CHANNELING; MEMBRANES; MONOCRYSTALS; MULTIPLE SCATTERING; NANOSTRUCTURES; PROTON CHANNELING; ROUGHNESS; SEMICONDUCTOR MATERIALS; SILICON; SURFACES; THIN FILMS; TRANSVERSE MOMENTUM
- Descriptors DEC
- CHANNELING; CRYSTALS; DISTRIBUTION; ELEMENTS; FILMS; LINEAR MOMENTUM; MATERIALS; MICROSCOPY; SCATTERING; SEMIMETALS; SURFACE PROPERTIES
Optional Information
- Notes
- (c) 2011 American Institute of Physics