Published 1999 | Version v1
Miscellaneous Open

Modelling ionising radiation induced defect generation in bipolar oxides with gated diodes

Creators

  • 1. Vanderbilt Univ., Dept. of ECE (United States)
  • 2. VTC Inc. Bloomington, MN (United States)
  • 3. Bordeaux Univ., Lab. IXL, CNRS UMR 5818, 33 (France)

Description

Radiation-induced oxide defects that degrade electrical characteristics of bipolar junction transistor (BJTs) can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation. (authors)

Availability note (English)

Available from INIS in electronic form

Files

34077981.pdf

Files (188.0 kB)

Name Size Download all
md5:bec25313fe70b260ca8920616a10a8ac
188.0 kB Preview Download

Additional details

Additional titles

Original title (English)
Modelisation de la generation de defauts crees par irradiation dans les oxydes de transistors bipolaires: caracterisation par la methode ''diodes controlees par grille''

Publishing Information

Imprint Pagination
[3 p.]
Report number
INIS-FR--1987

Conference

Title
5. European conference on radiation and its effects on components and systems
Original Conference Title
5. congres europeen les radiations et leurs effets sur les composants et les systemes
Dates
13-17 Sep 1999
Place
Abbaye de Fontevraud (France)

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
34077981
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COMPUTERIZED SIMULATION; IONIZING RADIATIONS; JUNCTION TRANSISTORS; P-N JUNCTIONS; PHYSICAL RADIATION EFFECTS
Descriptors DEC
RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SIMULATION; TRANSISTORS

Optional Information

Notes
10 refs.