Published April 2018 | Version v1
Journal article

Fullerene/cobalt porphyrin charge-transfer cocrystals: Excellent thermal stability and high mobility

  • 1. Huazhong University of Science and Technology (HUST), State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering (China)
  • 2. Huazhong University of Science and Technology, Wuhan National Laboratory for Optoelectronics and College of Optoelectronic Science and Engineering (China)
  • 3. Kyoto University, Department of Molecular Engineering, Graduate School of Engineering (Japan)
  • 4. Hebei University of Technology, School of Materials Science and Engineering (China)
  • 5. National Institute for Materials Science (NIMS), International Center for Materials Nanoarchitectonics (WPI-MANA) (Japan)

Description

Although organic semiconductors with high mobility and thermal stability are particularly desirable for practical applications, facile methods for their development still remains a big challenge. In this work, a charge-transfer cocrystal based on fullerene (C70)/cobalt porphyrin supramolecular architecture was prepared by a solution-processable co-assembly strategy. This supramolecular architecture showed hole mobility as high as 4.21 cm2·V−1·s−1, and a relatively high mobility of 0.02 cm2·V−1·s−1 even after thermal treatment at 1,000 °C. Further studies confirmed the occurrence of charge-transfer from 5,10,15,20-tetrakis(4-methoxyphenyl)porphyrinato cobalt(II) (CoTMPP) to C70 and the paramagnetic character within the supramolecular system. These factors were found to be responsible for the aforementioned superior performances. Thus, a novel organic semiconductor has been reported in this work, which can be potentially used for next generation electronic devices. Furthermore, it has been demonstrated that charge-transfer co-crystallization is a powerful strategy for the rational design and construction of a broad class of new multifunctional organic co-crystalline materials. .

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Identifiers

Publishing Information

Journal Title
Nano Research (Print)
Journal Volume
11
Journal Issue
4
Journal Page Range
p. 1917-1927
ISSN
1998-0124

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Copyright (c) 2017 Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature