Published December 2006 | Version v1
Journal article Metadata-only

Nonmonotonic changes of radiation defects concentrations of donor and acceptor types in silicon induced by a low-intensity beta-irradiation

Creators

  • 1. Inst. Fiziki Tverdogo Tela RAN, Chernogolovka (Russian Federation)
  • 2. Tambovskij Gosudarstvennyj Univ. im. G.R. Derzhavina, Tambov (Russian Federation)

Description

Deep level transient spectroscopy is used to study the dependence of the concentration of the donor- and acceptor-type radiation defects in silicon on the duration of irradiation with low-intensity fluxes of β-particles ( 9x105 cm-2 s-1). It is found that the concentrations of crystal defects in Si n-type and p-type conductors vary nonmonotonically. It is shown that the concentration of electrically active radiation defects and the microhardness of silicon vary in the antiphase way

Abstract (Russian)

Методом нестационарной емкостной спектроскопии глубоких уровней исследована зависимость концентрации радиационных дефектов донорного и акцепторного типов в кремнии от времени облучения потоками β-частиц малой интенсивности (9х105 см-2 c-1). Обнаружены немонотонные изменения концентраций для кристаллов Si n- и p-типов проводимостей. Показано, что концентрация электрически активных радиационных дефектов и микротвердость кремния изменяются противофазно

Additional details

Additional titles

Original title (Russian)
Немонотонные изменения концентрации радиационных дефектов донорного и акцепторного типов в кремнии, индуцируемые потоками β-частиц малой интенсивности

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
40
Journal Issue
12
Journal Page Range
p. 1409-1411
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
39010687
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
BETA PARTICLES; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; EXPERIMENTAL DATA; KEV RANGE 100-1000; MICROHARDNESS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON; TIME DEPENDENCE
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; ELEMENTS; ENERGY RANGE; HARDNESS; INFORMATION; IONIZING RADIATIONS; KEV RANGE; MATERIALS; MECHANICAL PROPERTIES; NUMERICAL DATA; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS; SPECTROSCOPY

Optional Information

Notes
11 refs., 2 figs.