Published July 2002 | Version v1
Journal article Metadata-only

Study of the effect of electron irradiation on a GaSe-SiO2 structure by spectroscopic methods

Creators

  • 1. Institute of Physics, Academy of Sciences of Azerbaijan, pr. Dzhavida 33, Baku, 370143 (Azerbaijan)
  • 2. Gyandzha State University, Gyandzha, 374700 (Azerbaijan)

Description

Auger electron spectroscopy and Raman spectroscopy were used to study a GaSe-SiO2 structure before and after irradiation with 4.0-MeV electrons at a dose of 3.0 x 1015 cm-2. It was shown that after the irradiation the thickness of the transition region in the GaSe-SiO2 structure decreases, while the oxide film becomes more homogenous. One of the possible causes of these changes may be radiation-stimulated gettering of Ga atoms by the GaSe-SiO2 interface that serves as a sink

Additional details

Identifiers

DOI
10.1134/1.1493753;

Publishing Information

Journal Title
Semiconductors
Journal Volume
36
Journal Issue
7
Journal Page Range
p. 805-807
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35052800
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
AUGER ELECTRON SPECTROSCOPY; CRYSTAL DEFECTS; ELECTRON BEAMS; EXPERIMENTAL DATA; GALLIUM; GALLIUM SELENIDES; GETTERING; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; RAMAN SPECTRA; SILICON OXIDES
Descriptors DEC
BEAMS; CHALCOGENIDES; CRYSTAL STRUCTURE; DATA; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; GALLIUM COMPOUNDS; INFORMATION; LEPTON BEAMS; METALS; MEV RANGE; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; PARTICLE BEAMS; RADIATION EFFECTS; SELENIDES; SELENIUM COMPOUNDS; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 36, 858-860 (No. 7, 2002); (c) 2002 MAIK ''Nauka / Interperiodica''.