Published October 3, 1974 | Version v1
Journal article

Monolithic polycrystalline-silicon pressure transducer

Creators

  • 1. General Motors Research Labs., Warren, Mich. (USA)

Description

A monolithic pressure transducer using polycrystalline silicon for both the diaphragm material and an integral piezoresistor has been fabricated. The device can be made with good repeatability and with easily varied diaphragm thickness. Electrical-output linearity is very good over a pressure range of 0–11 cm Hg for a 2.4 μm diaphragm having an area of 0.00136 cm2.

Additional details

Identifiers

Publishing Information

Journal Title
Electronics Letters
Journal Volume
10
Journal Issue
20
Series
Electron. Lett.
Journal Page Range
420-421
ISSN
0013-5194

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
6160782
Subject category
S07: ISOTOPES AND RADIATION SOURCES;
Descriptors DEI
INTEGRATED CIRCUITS; ION IMPLANTATION; POLYCRYSTALS; SILICON; TRANSDUCERS
Descriptors DEC
CRYSTALS; ELECTRONIC CIRCUITS; ELEMENTS; SEMIMETALS

Optional Information

Notes
Updated automatically by Metadata and Full-Text Enrichment Agent