Published October 3, 1974
| Version v1
Journal article
Monolithic polycrystalline-silicon pressure transducer
Description
A monolithic pressure transducer using polycrystalline silicon for both the diaphragm material and an integral piezoresistor has been fabricated. The device can be made with good repeatability and with easily varied diaphragm thickness. Electrical-output linearity is very good over a pressure range of 0–11 cm Hg for a 2.4 μm diaphragm having an area of 0.00136 cm2.
Additional details
Identifiers
- DOI
- 10.1049/el:19740335;
Publishing Information
- Journal Title
- Electronics Letters
- Journal Volume
- 10
- Journal Issue
- 20
- Series
- Electron. Lett.
- Journal Page Range
- 420-421
- ISSN
- 0013-5194
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 6160782
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES;
- Descriptors DEI
- INTEGRATED CIRCUITS; ION IMPLANTATION; POLYCRYSTALS; SILICON; TRANSDUCERS
- Descriptors DEC
- CRYSTALS; ELECTRONIC CIRCUITS; ELEMENTS; SEMIMETALS
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent